minority carrier

Determination of minority carrier diffusion length by EBIC for InSb multi-element arrays

用EBIC测量InSb多元探测器少子扩散长度

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The minority carrier recombination in grain boundary and its width are considered.

考虑了晶粒间界厚度和其中的少数载流子复合，假设晶粒间界和晶粒具有不同的少数载流子迁移率和寿命。

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Measurement of Minority Carrier Lifetime in HgCdTe p-n Junctions

碲镉汞pn结中少数载流子寿命的测量

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Study on measuring system for minority carrier lifetime

少数载流子寿命测试系统研究

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Influence of Al BSF Gettering on Minority Carrier Lifetime in Silicon Solar Cell

硅光单体电源铝背场吸杂对非平衡少子寿命的影响

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Using the metal-semiconductor contact model, the calculation formulas are derived. The diffusion length of minority carrier, interface recombination speed and heterojunction barrier width are calculated.

采用类金属半导体接触模型，推导出有关计算公式，计算得出其介面复合速度和异质结势垒宽度等参数。

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All these three ways can improve the minority carrier lifetime effectively.

三种吸杂方式都能明显提高多晶硅的少子寿命.

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Minority-Carrier Life Time Lateral Non-Uniform Distribution Fast Recover Diode

少数载流子寿命横向非均匀分布的快恢复二极管特性

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Spin-on platinum diffusion was used to control lifetime of minority carrier to reduce the reverse recovery time trr.

采用铂液态源扩散降低少数载流子寿命τ从而缩短反向恢复时间trr；

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After annealing in lower temperature, positive charge reduced and interface defect state does not changed, thereby speeding up the photo generated minority carrier recombination.

退火工艺中较低温度下退火后正电荷减少，界面缺陷态没有变化，从而加快了光生少数载流子的复合。

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In process of making polycrystalline sillicon solar cell material, the microstructure defect of material surface worsenes electric character of material and reduces minority carrier life because of ion injecting and maching.

在制备多晶硅太阳能电池材料的过程中，离子注入和机械加工往往使材料表层微结构产生缺陷，恶化了材料的电学性能，降低了少数载流子寿命。

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Fast reading minority carrier diffusion length by SPV method

表面光电压法直读少子扩散长度

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According to the calculations of Shockley single level recombination theory and the measurement, the analysis and the comparison of electri-cal parameters for Fast Switching Thyristor to produce with four minority carrier con-trolled methods. Propounds proper evaluating to them.

根据Shockley单能级复合理论的计算及采用四种寿命控制方法制造的快速晶闸管电参数的测量、分析和比较，提出对这四种少子寿命控制技术的适当评价。

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A NEW METHOD FOR DETERMINATION OF ENERGY GAP AND MINORITY-CARRIER RECOMBINATION LIFETIME IN HIGHLY DOPED EMITTER The Influence of Stress on Mechanical Performance of Highly Doped Square-Shaped Silicon Diaphragm

重掺杂发射区中禁带宽度和少子复合寿命的确定方法应力对硅悬空薄膜的机械灵敏度的影响

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According to the minority carrier lifetime and X-ray photoelectron spectrum ( XPS) tests, systematical analysis on the effect of different factors on the passivation performance was carried out. Also, two different wet chemical treatments were compared.

以微电导少子寿命测试仪和X射线光电子能谱仪测试结果作为依据，对各个影响因素进行了系统的分析，比较不同工艺条件下的钝化效果。

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Effective Surface passivation which is needed to reduce the surface states and the minority carrier loss by surface recombination has become one of the key steps in fabrication of black silicon solar cells.

为了减少黑硅的表面态，需要对其进行有效钝化，在黑硅表面生长钝化层是同时减少单晶硅太阳电池光学和电学损失，提高电池效率的关键。

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The mobility value used is that of the minority carrier.

所采用的迁移率值都是少子迁移率.

词典精选例句

Influence of Al BSF Sintering in the RTP on the Minority Carrier Lifetime

RTP工艺中铝背场吸杂对硅片少子寿命影响的研究

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A new fast recover diode structure, the minority-carrier life time lateral non-uniform distribution ( MLD ) structure, is proposed.

提出了一种快恢复二极管新结构:少数载流子寿命横向非均匀分布 ( minority -carrierlifetim elateralnon - u-niform distribution, MLD ) 结构.

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We report on the establishment of Fourier transform step-scan time-resolved photoconductivity spectroscopy to study the solar cell's minority carrier lifetime, which has close relationship with its conversion efficiency.

建立傅里叶变换步进扫描时间分辨光电导光谱，并研究太阳电池中与转换效率密切相关的少数载流子寿命。

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Minority Carrier Life Time Study for Si Solar Cells

太阳电池中少数载流子的寿命测量

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It is shown that for devices of sintered Al electrode whether the boron diffusion can improve the drop characteristics mainly depends on the minority carrier life.

结果表明：对于烧铝电极器件浓硼扩散改善压降作用主要取决于能否提高器件的少子寿命；

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For the range of fluences studied, the observed effects result from a reduction in minority carrier lifetime in the IGBT and not from changes in the effective dopant density.

对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。

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Automatic measurement technology for the area distribution of the minority carrier lifetime of HgCdTe wafer

碲镉汞晶片少数载流子寿命面分布的自动测试技术

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Influence of carrier recombination in the space charge region and ingrain boundaries on minority carrier lifetime in the base region of polysilicon solar cells

空间电荷区和晶界复合对多晶太阳电池基区少数载流子寿命的影响

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